Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

Metal-Insulator-Semiconductor Photodetectors

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

“N” structure for type-II superlattice photodetectors

Related Articles Gallium free type II InAs/InAsxSb1-x superlattice photodetectors Appl. Phys. Lett. 101, 071111 (2012) Influence of delta-doping on the performance of Ge/Si quantum-dot mid-infrared photodetectors J. Appl. Phys. 112, 034511 (2012) Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions J. Appl. Phys. 112, 034508 (2012) Reliabil...

Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi- modal dot height distributions

Self-Organization of Ripples and Islands with SiGe-MBE

We explored two methods to obtain laterally ordered Ge/Si quantum dot arrays. For the first we exploit the two independent growth instabilities of the SiGe/Si(001) hetero-system, namely kinetic step bunching and Stranski-Krastanov (SK) island growth, to implement a two-stage growth scheme for the fabrication of long-range ordered SiGe islands. The second approach is to deposit Ge/SiGe onto prep...

Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides

The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infr...